Infineon Technologies AG Headquarters
Biberger Straße 93
Munich, Germany, and Shenzhen, China – 20 September, 2023 – Power semiconductors based on silicon carbide (SiC) offer several advantages, like high efficiency, power density, voltage resistance, and reliability. This creates opportunities for new applications and improved charging station technology innovations. Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY), today announced a collaboration with Infypower, a Chinese market leader in new energy vehicle charging. Infineon will provide INFY with the industry-leading 1200 V CoolSiC™ MOSFET power semiconductor devices to improve the efficiency of electric vehicle charging stations.